?2003 fairchild semiconductor corporation FMM7G20US60N rev. a igbt FMM7G20US60N FMM7G20US60N compact & complex module general description fairchild igbt power module provides low conduction and switching losses as well as short circuit ruggedness. it?s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. features short circuit rated time ; 10us @ t c =100 c, v ge = 15v high speed switching low saturation voltage : v ce (sat) = 2.1 v @ i c = 20a high input impedance built in brake & 3 phase rectifier circuit fast & soft anti-parallel fwd built-in ntc thermistor ul certified no. e209204 application ac & dc motor controls general purpose inverters robotics servo controls internal circuit diagram r s t p p+ b gb gu eu gv ev -gv u gw ew v -gw w -gu e ntc t1 t2 nn- package code : 24pm-aa absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FMM7G20US60N units inverter & brake v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 80 c20 a i cm (1) pulsed collector current 40 a i f diode continuous forward current @ t c = 80 c20 a i fm diode maximum forward current 40 a p d maximum power dissipation @ t c = 25 c89 w t sc short circuit withstand time @ t c = 100 c10 us converter v rrm repetitive peak reverse voltage 1600 v i o average output rectified current 20 a i fsm surge forward current @ 1cycle at 60hz, peak value non-repetitive 200 a i 2 t energy pulse @ 1cycle at 60hz 164 a 2 s common t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque mounting part screw @ m4 4.0 n.m
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N electrical characteristics of igbt @ inverter & brake t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges gate - emitter leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) gate - emitter threshold voltage i c = 20ma, v ce = v ge 5.0 6.5 8.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.1 2.7 v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1277 -- pf c oes output capacitance -- 98 -- pf c res reverse transfer capacitance -- 21 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 15 ? , v ge = 15v, inductive load, t c = 25 c -- 70 130 ns t r rise time -- 80 200 ns t d(off) turn-off delay time -- 130 200 ns t f fall time -- 140 250 ns e on turn-on switching loss -- 0.58 -- mj e off turn-off switching loss -- 0.42 -- mj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 15 ? , v ge = 15v, inductive load, t c = 125 c -- 70 130 ns t r rise time -- 75 200 ns t d(off) turn-off delay time -- 120 200 ns t f fall time -- 240 400 ns e on turn-on switching loss -- 0.65 -- mj e off turn-off switching loss -- 0.66 -- mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 55 80 nc q ge gate-emitter charge -- 10 20 nc q gc gate-collector charge -- 20 40 nc
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N electrical characteristics of diode @ inverter & brake t c = 25 c unless otherwise noted electrical characteristics of diode @ converter t c = 25 c unless otherwise noted thermal characteristics ntc thermistor characteristics symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 20a t c = 25 c -- 1.9 2.8 v t c = 100 c -- 2.0 -- t rr diode reverse recovery time i f = 20a di / dt = 40 a/us t c = 25 c -- 75 150 ns t c = 100 c -- 110 -- i rr diode peak reverse recovery current t c = 25 c -- 1.3 2.6 a t c = 100 c -- 1.8 -- q rr diode reverse recovery charge t c = 25 c -- 50 195 nc t c = 100 c -- 100 -- symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 20a t c = 25 c -- 1.1 1.5 v t c = 100 c -- 1.0 -- i rrm repetitive reverse current v r = v rrm t c = 25 c -- -- 8 ma t c = 100 c -- 5 -- symbol parameter typ. max. units inverter r jc junction-to-case (igbt part, per 1/6 module) -- 1.4 c / w r jc junction-to-case (diode part, per 1/6 module) -- 2.3 c / w brake r jc junction-to-case (igbt part) -- 1.4 c / w r jc junction-to-case (diode part) -- 2.3 c / w converter r jc junction-to-case (diode part, per 1/6 module) -- 1.5 c / w weight weight of module 210 -- g symbol parameter tol. typ. units thermistor r 25 rated resistance @ tc = 25 c +/- 5 % 5.0 k ? r 100 rated resistance @ tc = 100 c +/- 5 % 0.415 k ? b (25/100) b - value +/- 3 % 3692
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 z ? ? ? ? ? g w ? ? ? ? o { ? ? ? ? ? ? g ? ? ? ? ? ? ? ? p m y k p n i { thermal response, zthjc [ /w] rectangular pulse duration [sec] w u x x x w w z w w ] w w ` w w x y w w x \ w w x _ w w y x w w y [ w w y ^ w w z w w w j ? ? ? j ? ? ? j ? ? ? common emitter v ge = 0 v, f = 1 mhz t c = 25 o c g g j ? ? ? ? ? ? ? ? ? ? g ? ? m ? j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l g ? } ? t \ w w \ w x w w x \ w x u w x u \ y u w y u \ z u w z u \ [ u w common emitter v ge = 15 v j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l o ? ? ? p g ? } ? j ? ? ? g { ? ? ? ? ? ? ? ? ? ? s g { j g ? ? j ? 10 a 20 a 40 a g g w x y z [ \ ] w x w y w z w [ w \ w ] w 20v 18v 16v 15v 14v 12v v ge = 10v j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l o ? ? ? p g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? common emitter t c = 125 o c g g w x y z [ \ ] w x w y w z w [ w \ w ] w 12v 15v 14v 16v 18v 20v v ge = 10v j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l o ? ? ? p g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? common emitter t c = 25 o c g g x x w w x w y w z w [ w \ w ] w j ? ? ? ? ? ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } j l o ? ? ? p g ? } ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? common emitter v ge = 15 v t c = 25 t c = 125 ------ g g fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. typical saturation voltage characteristics fig 5. transient thermal impedance fig 6. capacitance characteristics fig 4. saturation voltage vs. case temperature at variant current level
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N x w x \ y w y \ z w z \ [ w x w w x w w w l ? ? ? l ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? common emitter v ge = 15v, r g = 15 ? t c = 25 t c = 125 ------ g g x w x \ y w y \ z w z \ [ w x w w x w w w { ? { ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v ge = 15v, r g = 15 ? t c = 25 t c = 125 ------ g g y w [ w ] w _ w x w w x w w x w w w l ? ? ? l ? ? z ? ? ? ? ? ? ? ? g s ? ? ? g ? ? q ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ g g y w [ w ] w _ w x w w x w w x w w w n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? { ? { ? ? ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ g g y w [ w ] w _ w x w w x w w x w w w { ? { ? ? n ? ? ? g y ? ? ? ? ? ? ? ? ? s g y ? ? ? ? z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ g g fig 7. turn-on characteristics vs. gate resistance fig 8. turn-off characteristics vs. gate resistance fig 11. turn-off characteristics vs. collector current fig 12. switching loss vs. collector current fig 9. switching loss vs. gate resistance fig 10. turn-on characteristics vs. collector current x w x \ y w y \ z w z \ [ w x w w x w w w z ? ? ? ? ? ? ? ? g { ? ? ? g ? ? ? ? j ? ? ? ? ? ? ? ? g j ? ? ? ? ? ? s g p j g ? h ? { ? { ? ? ? common emitter v ge = 15v, r g = 15 ? t c = 25 t c = 125 ------ g g
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N w [ w w _ w w x y w w x ] w w x l t z w u w x w u x x x w x w w x w w w { j g d g x y \ g ? j y \ g ? j g g y ? ? ? ? ? ? g j ? ? ? ? ? ? s g p y g ? ? h ? y ? ? ? ? ? ? g } ? ? ? ? ? ? s g } y g ? } ? 3 6 9 12 15 18 21 0.1 1 10 20 common cathode di/dt = 40a/us t c = 25 t c = 100 -------- i rr t rr peak reverse recovery current, i rr [a] reverse recovery time, t rr [x10ns] forward current, i f [a] 01234 0 5 10 15 20 25 30 35 40 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v] 0 100 200 300 400 500 600 700 0.1 1 10 80 single nonrepetitive pulse t j 125 v ge = 15v r g = 10 ? collector current, i c [a] collector-emitter voltage, v ce [v] w x w y w z w [ w \ w ] w w z ] ` x y x \ z w w g } y w w g } } j j g d g x w w g } common emitter r l = 15 ? t c = 25 o c g g n ? ? ? g t g l ? ? ? ? ? ? g } ? ? ? ? ? ? s g } n l g ? } ? n ? ? ? g j ? ? ? ? ? s g x ? g ? ? j ? fig 13. gate charge characteristics fig 14. rbsoa characteristics fig 15. forward characteristics fig 16. reverse recovery characteristics fig 17. rectifier( converter ) characteristics fig 18. rectifier( converter ) characteristics w u [ w u ] w u _ x u w x u y x u [ w u x x x w x w w y \ g ? j { j g d g x y \ g ? j g g p ? ? ? ? ? ? ? ? ? ? ? ? g m ? ? ? ? ? ? g j ? ? ? ? ? ? s g p m g ? h ? m ? ? ? ? ? ? g } ? ? ? ? ? ? s g } m g ? } ? g
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N t y \ w y \ \ w ^ \ x w w x y \ x x w { ? ? ? ? ? ? ? ? ? ? s g { g ? ? j ? y ? ? ? ? ? ? ? ? ? s g y ? r ? ? g g t y \ w y \ \ w ^ \ x w w z [ w w z [ \ w z \ w w z \ \ w z ] w w z ] \ w z ^ w w z ^ \ w z _ w w { ? ? ? ? ? ? ? ? ? ? g ? ? j ? i g y \ v g j ? ? ? ? ? ? ? g g fig 20. ntc characteristics fig 19. ntc characteristics
?2003 fairchild semiconductor corporation FMM7G20US60N rev. a FMM7G20US60N dimensions in millimeters package dimension 24pm-aa 41.90 -7.62 17 41.90 -15.24 16 41.90 -19.05 15 41.90 -26.67 14 41.90 -30.48 13 41.90 -38.10 12 41.90 -41.91 11 36.19 -66.27 10 28.57 -66.27 9 41.90 7.62 21 41.90 3.81 20 41.90 0.0 19 41.90 -3.81 18 13.33 -66.27 8 y x 12.93 12.93 12.93 -66.27 -57.15 -45.72 -34.29 -22.86 -11.43 0.0 coordinate pin #no 13.33 24 28.57 23 32.38 22 5.71 7 0.0 6 0.0 5 0.0 4 0.0 3 0.0 2 0.0 1 -. pin coordinate ? datum pin : #1 pin tilt : 0.20 93.0 0.30 107.0 0.80 45.0 0.80 35.0 0.30 41.9 0.30 2- ? 5.5 0.30 mounting-hole 1 6 10 21 26.67 0.20 20.95 0.20 16.8 0.50 15.3 0.50 32.0 1.00 1.15 0.20 * 0.8t name plate 42.7 0.50 4- ? 6.0 4- ? 2.0 0.10 dp 4.5 7.1
?2003 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i2 fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
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